Katharina Lorenz
AuthID: R-000-90E
121
TITLE: GaN:Pr3+ nanostructures for red solid state light emission
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K; Monteiro, T;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
AUTHORS: Rodrigues, J; Ben Sedrine, N; Felizardo, M ; Soares, MJ; Alves, E; Neves, AJ; Fellmann, V; Tourbot, G; Auzelle, T; Daudin, B; Bockowski, M; Lorenz, K; Monteiro, T;
PUBLISHED: 2014, SOURCE: RSC ADVANCES, VOLUME: 4, ISSUE: 108
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ORCID | ResearcherID122
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics Full Text
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
AUTHORS: Valdueza Felip, S; Bellet Amalric, E; Nunez Cascajero, A; Wang, Y; P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 116, ISSUE: 23
INDEXED IN: WOS
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ORCID | ResearcherID123
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO3: an integrated review
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Annual Conference on Oxide-Based Materials and Devices V held at SPIE Photonics West in OXIDE-BASED MATERIALS AND DEVICES V, VOLUME: 8987
124
TITLE: Erratum: Lattice location of Hf and its interaction with other impurities in LiNbO<inf>3</inf>: A review (Optical Engineering (2014) 53:6 (060901))
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Optical Engineering, VOLUME: 53, ISSUE: 6
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Optical Engineering, VOLUME: 53, ISSUE: 6
INDEXED IN: 
Scopus
Scopus IN MY: ORCID
ORCID125
TITLE: Lattice location of Hf and its interaction with other impurities in LiNbO<inf>3</inf>: A review
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Optical Engineering, VOLUME: 53, ISSUE: 6
AUTHORS: Marques, JG; Lorenz, K;
PUBLISHED: 2014, SOURCE: Optical Engineering, VOLUME: 53, ISSUE: 6
INDEXED IN: Scopus
Scopus IN MY: ORCID
ORCID126
TITLE: High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: Growth conditions, strain relaxation, and In incorporation kinetics Full Text
AUTHORS: Valdueza-Felip, S; Bellet-Amalric, E; Núñez-Cascajero, A; Wang, Y; M.-P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 116, ISSUE: 23
AUTHORS: Valdueza-Felip, S; Bellet-Amalric, E; Núñez-Cascajero, A; Wang, Y; M.-P Chauvat; Ruterana, P; Pouget, S; Lorenz, K; Alves, E; Monroy, E;
PUBLISHED: 2014, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 116, ISSUE: 23
127
TITLE: Errata: Lattice location of Hf and its interaction with other impurities in LiNbO3: a review
AUTHORS: José G Marques; Katharina Lorenz;
PUBLISHED: 2014, SOURCE: Optical Engineering - Opt. Eng, VOLUME: 53, ISSUE: 6
AUTHORS: José G Marques; Katharina Lorenz;
PUBLISHED: 2014, SOURCE: Optical Engineering - Opt. Eng, VOLUME: 53, ISSUE: 6
128
TITLE: Functional nanowires: Synthesis, characterization and applications
AUTHORS: Bianchi Méndez; Katharina Lorenz; Beatrice Fraboni; Oliver Ambacher;
PUBLISHED: 2014, SOURCE: Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 11, ISSUE: 2
AUTHORS: Bianchi Méndez; Katharina Lorenz; Beatrice Fraboni; Oliver Ambacher;
PUBLISHED: 2014, SOURCE: Physica Status Solidi (C) Current Topics in Solid State Physics, VOLUME: 11, ISSUE: 2
129
TITLE: Composition and luminescence studies of InGaN epilayers grown at different hydrogen flow rates Full Text
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
AUTHORS: Taylor, E; Fang, F; Oehler, F; Edwards, PR; Kappers, MJ; Lorenz, K; Alves, E ; McAleese, C; Humphreys, CJ; Martin, RW;
PUBLISHED: 2013, SOURCE: SEMICONDUCTOR SCIENCE AND TECHNOLOGY, VOLUME: 28, ISSUE: 6
IN MY: ORCID | ResearcherID
ORCID | ResearcherID130
TITLE: Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering Full Text
AUTHORS: Lorenz, K; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLISHED: 2013, SOURCE: ACTA MATERIALIA, VOLUME: 61, ISSUE: 9
AUTHORS: Lorenz, K; Nogales, E; Miranda, SMC; Franco, N; Mendez, B; Alves, E ; Tourbot, G; Daudin, B;
PUBLISHED: 2013, SOURCE: ACTA MATERIALIA, VOLUME: 61, ISSUE: 9
IN MY: ORCID | ResearcherID
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