Katharina Lorenz
AuthID: R-000-90E
131
TITLE: Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires Full Text
AUTHORS: Rodrigues, J; Miranda, SMC; Fernandes, AJS; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Auzelle, T; Daudin, B; Mendez, B; Trindade, T ; Lorenz, K; Costa, FM ; Monteiro, T ;
PUBLISHED: 2013, SOURCE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, ISSUE: 4
AUTHORS: Rodrigues, J; Miranda, SMC; Fernandes, AJS; Nogales, E; Alves, LC; Alves, E ; Tourbot, G; Auzelle, T; Daudin, B; Mendez, B; Trindade, T ; Lorenz, K; Costa, FM ; Monteiro, T ;
PUBLISHED: 2013, SOURCE: E-MRS ICAM IUMRS Spring Meeting / Symposium T on Physics and Applications of Novel Gain Materials Based on Nitrogen and Bismuth Containing III-V Compounds in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 4, VOLUME: 10, ISSUE: 4
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ORCID | ResearcherID132
TITLE: On the origin of strain relaxation in epitaxial CdZnO layers
AUTHORS: Redondo Cubero, A; Rodrigues, J; Brandt, M; Schaefer, P; Henneberger, F; Correia, MR ; Monteiro, T; Alves, E ; Lorenz, K;
PUBLISHED: 2013, SOURCE: Conference on Oxide-Based Materials and Devices IV in OXIDE-BASED MATERIALS AND DEVICES IV, VOLUME: 8626
AUTHORS: Redondo Cubero, A; Rodrigues, J; Brandt, M; Schaefer, P; Henneberger, F; Correia, MR ; Monteiro, T; Alves, E ; Lorenz, K;
PUBLISHED: 2013, SOURCE: Conference on Oxide-Based Materials and Devices IV in OXIDE-BASED MATERIALS AND DEVICES IV, VOLUME: 8626
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Scopus WOS
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ORCID | ResearcherID133
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
INDEXED IN: Scopus WOS
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ORCID | ResearcherID134
TITLE: Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
IN MY: ORCID | ResearcherID
ORCID | ResearcherID135
TITLE: Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications Full Text
AUTHORS: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, ISSUE: 47
AUTHORS: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, ISSUE: 47
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ORCID | ResearcherID136
TITLE: Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-implanted, Mg-doped HVPE GaN Full Text
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
137
TITLE: Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments Full Text
AUTHORS: López, I; Lorenz, K; Nogales, E; Méndez, B; Piqueras, J; Alves, E; García, JA;
PUBLISHED: 2013, SOURCE: J Mater Sci - Journal of Materials Science, VOLUME: 49, ISSUE: 3
AUTHORS: López, I; Lorenz, K; Nogales, E; Méndez, B; Piqueras, J; Alves, E; García, JA;
PUBLISHED: 2013, SOURCE: J Mater Sci - Journal of Materials Science, VOLUME: 49, ISSUE: 3
138
TITLE: On the origin of strain relaxation in epitaxial CdZnO layers
AUTHORS: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T; Alves, E; Lorenz, K;
PUBLISHED: 2013, SOURCE: Oxide-based Materials and Devices IV
AUTHORS: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T; Alves, E; Lorenz, K;
PUBLISHED: 2013, SOURCE: Oxide-based Materials and Devices IV
139
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
140
TITLE: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
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