141
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
INDEXED IN: CrossRef
IN MY: ORCID
142
TITLE: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
INDEXED IN: Scopus WOS CrossRef
143
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions  Full Text
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
INDEXED IN: Scopus WOS CrossRef: 3
144
TITLE: Influence of neutron irradiation and annealing on the optical properties of GaN  Full Text
AUTHORS: Rodrigues, J; Peres, M; Soares, MJ; Lorenz, K; Marques, JG ; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef: 4
145
TITLE: Ion implantation of Cd and Ag into AlN and GaN  Full Text
AUTHORS: Miranda, SMC; Kessler, P; Correia, JG ; Vianden, R; Johnston, K; Alves, E ; Lorenz, K;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
146
TITLE: Cd doping of AlN via ion implantation studied with perturbed angular correlation  Full Text
AUTHORS: Kessler, P; Lorenz, K; Miranda, SMC; Simon, R; Correia, JG ; Johnston, K; Vianden, R; Isolde collaboration the;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
INDEXED IN: Scopus WOS CrossRef
147
TITLE: Doped gallium oxide nanowires for photonics
AUTHORS: Nogales, E; Lopez, I; Mendez, B; Piqueras, J; Lorenz, K; Alves, E ; Garcia, JA;
PUBLISHED: 2012, SOURCE: Conference on Oxide-Based Materials and Devices III in OXIDE-BASED MATERIALS AND DEVICES III, VOLUME: 8263
INDEXED IN: Scopus WOS CrossRef
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148
TITLE: High precision determination of the InN content of Al1−xInxN thin films by Rutherford backscattering spectrometry  Full Text
AUTHORS: Magalhães, S; N.P Barradas; Alves, E; I.M Watson; Lorenz, K;
PUBLISHED: 2012, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 273
INDEXED IN: CrossRef
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149
TITLE: Single phase a-plane MgZnO epilayers for UV optoelectronics: substitutional behaviour of Mg at large contents  Full Text
AUTHORS: Redondo-Cubero, A; Hierro, A; J.-M Chauveau; Lorenz, K; Tabares, G; Franco, N; Alves, E; Muñoz, E;
PUBLISHED: 2012, SOURCE: CrystEngComm, VOLUME: 14, ISSUE: 5
INDEXED IN: CrossRef
IN MY: ORCID
150
TITLE: Ion beams as a tool for the characterization of near-pseudomorphic CdZnO epilayers
AUTHORS: Redondo-Cubero, A; Brandt, M; Henneberger, F; Alves, E; Lorenz, K;
PUBLISHED: 2012, SOURCE: Oxide-based Materials and Devices III
INDEXED IN: CrossRef
IN MY: ORCID
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