Katharina Lorenz
AuthID: R-000-90E
141
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
AUTHORS: Redondo Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; Garcia, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: NANOTECHNOLOGY, VOLUME: 24, ISSUE: 50
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ORCID | ResearcherID
ORCID | ResearcherID142
TITLE: Mechanisms of Damage Formation during Rare Earth Ion Implantation in Nitride Semiconductors
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
AUTHORS: Pierre Ruterana; Marie Pierre Chauvat; Katharina Lorenz;
PUBLISHED: 2013, SOURCE: JAPANESE JOURNAL OF APPLIED PHYSICS, VOLUME: 52, ISSUE: 11
IN MY: ORCID | ResearcherID
ORCID | ResearcherID143
TITLE: Structural and luminescence properties of Eu and Er implanted Bi2O3 nanowires for optoelectronic applications Full Text
AUTHORS: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, ISSUE: 47
AUTHORS: Maria Vila; Carlos Diaz Guerra; Katharina Lorenz; Javier Piqueras; Eduardo Alves ; Silvia Nappini; Elena Magnano;
PUBLISHED: 2013, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 1, ISSUE: 47
IN MY: ORCID | ResearcherID
ORCID | ResearcherID144
TITLE: Temperature-Dependent Hysteresis of the Emission Spectrum of Eu-implanted, Mg-doped HVPE GaN Full Text
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
AUTHORS: O'Donnell, KP; Martin, RW; Edwards, PR; Lorenz, K; Alves, E; Bockowski, M;
PUBLISHED: 2013, SOURCE: 31st International Conference on the Physics of Semiconductors (ICPS) in PHYSICS OF SEMICONDUCTORS, VOLUME: 1566
145
TITLE: Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments Full Text
AUTHORS: López, I; Lorenz, K; Nogales, E; Méndez, B; Piqueras, J; Alves, E; García, JA;
PUBLISHED: 2013, SOURCE: J Mater Sci - Journal of Materials Science, VOLUME: 49, ISSUE: 3
AUTHORS: López, I; Lorenz, K; Nogales, E; Méndez, B; Piqueras, J; Alves, E; García, JA;
PUBLISHED: 2013, SOURCE: J Mater Sci - Journal of Materials Science, VOLUME: 49, ISSUE: 3
146
TITLE: On the origin of strain relaxation in epitaxial CdZnO layers
AUTHORS: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T; Alves, E; Lorenz, K;
PUBLISHED: 2013, SOURCE: Oxide-based Materials and Devices IV
AUTHORS: Redondo-Cubero, A; Rodrigues, J; Brandt, M; Schäfer, P; Henneberger, F; Correia, MR; Monteiro, T; Alves, E; Lorenz, K;
PUBLISHED: 2013, SOURCE: Oxide-based Materials and Devices IV
147
TITLE: Selective ion-induced intermixing and damage in low-dimensional GaN/AlN quantum structures Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
AUTHORS: Redondo-Cubero, A; Lorenz, K; Wendler, E; Carvalho, D; Ben, T; Morales, FM; García, R; Fellmann, V; Daudin, B;
PUBLISHED: 2013, SOURCE: Nanotechnology, VOLUME: 24, ISSUE: 50
148
TITLE: Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
AUTHORS: Catarino, N; Nogales, E; Franco, N; Darakchieva, V; Miranda, SMC; Mendez, B; Alves, E ; Marques, JG ; Lorenz, K;
PUBLISHED: 2012, SOURCE: EPL, VOLUME: 97, ISSUE: 6
IN MY: ORCID | ResearcherID
ORCID | ResearcherID149
TITLE: Optical doping of AlxGa1-xN compounds by Ion Implantation of Tm ions Full Text
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
AUTHORS: Fialho, M; Lorenz, K; Magalhaes, S; Redondo Cubero, A; Rodrigues, J; Santos, NF; Monteiro, T ; Alves, E ;
PUBLISHED: 2012, SOURCE: 19th International Conference on Ion Implantation Technology (IIT) in ION IMPLANTATION TECHNOLOGY 2012, VOLUME: 1496
IN MY: ORCID | ResearcherID
ORCID | ResearcherID150
TITLE: Influence of neutron irradiation and annealing on the optical properties of GaN Full Text
AUTHORS: Rodrigues, J; Peres, M; Soares, MJ; Lorenz, K; Marques, JG ; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
AUTHORS: Rodrigues, J; Peres, M; Soares, MJ; Lorenz, K; Marques, JG ; Neves, AJ ; Monteiro, T ;
PUBLISHED: 2012, SOURCE: Symposium F on Group III Nitrides and their Heterostructures for Electronics and Photonics/ICAM IUMRS Spring Meeting of the European-Materials-Research-Society (E-MRS) in PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, VOLUME: 9, ISSUE: 3-4
IN MY: ORCID | ResearcherID
ORCID | ResearcherID