Katharina Lorenz
AuthID: R-000-90E
151
TITLE: Implanted Impurities in Wide Band Gap Semiconductors
AUTHORS: Keßler, P; Lorenz, K; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum - DDF, VOLUME: 311
AUTHORS: Keßler, P; Lorenz, K; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum - DDF, VOLUME: 311
152
TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures Full Text
AUTHORS: Magalhães, S; Lorenz, K; Franco, N; Barradas, NP; Alves, E; Monteiro, T; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: Surface and Interface Analysis - Surf. Interface Anal., VOLUME: 42, ISSUE: 10-11
AUTHORS: Magalhães, S; Lorenz, K; Franco, N; Barradas, NP; Alves, E; Monteiro, T; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: Surface and Interface Analysis - Surf. Interface Anal., VOLUME: 42, ISSUE: 10-11
153
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation Full Text
AUTHORS: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E; Monteiro, T; Lorenz, K;
PUBLISHED: 2010, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, ISSUE: 8
AUTHORS: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E; Monteiro, T; Lorenz, K;
PUBLISHED: 2010, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, ISSUE: 8
154
TITLE: Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; M-A di Forte Poisson; Alves, E; Muñoz, E;
PUBLISHED: 2010, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 43, ISSUE: 5
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; M-A di Forte Poisson; Alves, E; Muñoz, E;
PUBLISHED: 2010, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 43, ISSUE: 5
155
TITLE: Alloy and lattice disorder in Hf implanted Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz; Reiner Vianden;
PUBLISHED: 2009, SOURCE: Physica B: Condensed Matter, VOLUME: 404, ISSUE: 23-24
AUTHORS: Thomas Geruschke; Katharina Lorenz; Reiner Vianden;
PUBLISHED: 2009, SOURCE: Physica B: Condensed Matter, VOLUME: 404, ISSUE: 23-24
156
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
157
TITLE: Optical and structural properties of Eu-implanted In[sub x]Al[sub 1−x]N Full Text
AUTHORS: Roqan, IS; O’Donnell, KP; Martin, RW; Trager-Cowan, C; Matias, V; Vantomme, A; Lorenz, K; Alves, E; Watson, IM;
PUBLISHED: 2009, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 106, ISSUE: 8
AUTHORS: Roqan, IS; O’Donnell, KP; Martin, RW; Trager-Cowan, C; Matias, V; Vantomme, A; Lorenz, K; Alves, E; Watson, IM;
PUBLISHED: 2009, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 106, ISSUE: 8
158
TITLE: Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Franco, N; Fernández-Garrido, S; Gago, R; Smulders, PJM; Muñoz, E; Calleja, E; Alves, E;
PUBLISHED: 2009, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 42, ISSUE: 6
AUTHORS: Redondo-Cubero, A; Lorenz, K; Franco, N; Fernández-Garrido, S; Gago, R; Smulders, PJM; Muñoz, E; Calleja, E; Alves, E;
PUBLISHED: 2009, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 42, ISSUE: 6
159
TITLE: Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range (vol 90, art no 022105, 2007) Full Text
AUTHORS: Hums, C; Blaesing, J; Dadgar, A; Diez, A; Hempel, T; Christen, J; Krost, A; Lorenz, K; Alves, E;
PUBLISHED: 2007, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 91, ISSUE: 13
AUTHORS: Hums, C; Blaesing, J; Dadgar, A; Diez, A; Hempel, T; Christen, J; Krost, A; Lorenz, K; Alves, E;
PUBLISHED: 2007, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 91, ISSUE: 13
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TITLE: Implantation of nanoporous GaN with Eu ions Full Text
AUTHORS: Magalhães, S; Lorenz, K; Peres, M; Monteiro, T; Tripathy, S; Alves, E;
PUBLISHED: 2007, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 257, ISSUE: 1-2
AUTHORS: Magalhães, S; Lorenz, K; Peres, M; Monteiro, T; Tripathy, S; Alves, E;
PUBLISHED: 2007, SOURCE: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, VOLUME: 257, ISSUE: 1-2
