151
TITLE: The photoluminescence/excitation (PL/E) spectroscopy of Eu-implanted GaN  Full Text
AUTHORS: K.P O’Donnell; I.S Roqan; Ke Wang; Lorenz, K; Alves, E; Boćkowski, M;
PUBLISHED: 2011, SOURCE: Optical Materials, VOLUME: 33, ISSUE: 7
INDEXED IN: CrossRef
IN MY: ORCID
152
TITLE: <title>Radiation damage formation and annealing in GaN and ZnO</title>
AUTHORS: Lorenz, K; Peres, M; Franco, N; Marques, JG; Miranda, SMC; Magalhães, S; Monteiro, T; Wesch, W; Alves, E; Wendler, E;
PUBLISHED: 2011, SOURCE: Oxide-based Materials and Devices II
INDEXED IN: CrossRef: 30
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153
TITLE: Implanted Impurities in Wide Band Gap Semiconductors
AUTHORS: Keßler, P; Lorenz, K; Vianden, R;
PUBLISHED: 2011, SOURCE: Defect and Diffusion Forum - DDF, VOLUME: 311
INDEXED IN: CrossRef
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154
TITLE: Effect of annealing on AlN/GaN quantum dot heterostructures: advanced ion beam characterization and X-ray study of low-dimensional structures  Full Text
AUTHORS: Magalhães, S; Lorenz, K; Franco, N; Barradas, NP; Alves, E; Monteiro, T; Amstatt, B; Fellmann, V; Daudin, B;
PUBLISHED: 2010, SOURCE: Surface and Interface Analysis - Surf. Interface Anal., VOLUME: 42, ISSUE: 10-11
INDEXED IN: CrossRef: 3
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155
TITLE: Functionalizing self-assembled GaN quantum dot superlattices by Eu-implantation  Full Text
AUTHORS: Magalhães, S; Peres, M; Fellmann, V; Daudin, B; Neves, AJ; Alves, E; Monteiro, T; Lorenz, K;
PUBLISHED: 2010, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 108, ISSUE: 8
INDEXED IN: CrossRef: 10
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156
TITLE: Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; M-A di Forte Poisson; Alves, E; Muñoz, E;
PUBLISHED: 2010, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 43, ISSUE: 5
INDEXED IN: CrossRef
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157
TITLE: Alloy and lattice disorder in Hf implanted  Full Text
AUTHORS: Thomas Geruschke; Katharina Lorenz; Reiner Vianden;
PUBLISHED: 2009, SOURCE: Physica B: Condensed Matter, VOLUME: 404, ISSUE: 23-24
INDEXED IN: CrossRef
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158
TITLE: Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Gago, R; Franco, N; Fernández-Garrido, S; Smulders, PJM; Muñoz, E; Calleja, E; Watson, IM; Alves, E;
PUBLISHED: 2009, SOURCE: Appl. Phys. Lett. - Applied Physics Letters, VOLUME: 95, ISSUE: 5
INDEXED IN: CrossRef
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159
TITLE: Optical and structural properties of Eu-implanted In[sub x]Al[sub 1−x]N  Full Text
AUTHORS: Roqan, IS; O’Donnell, KP; Martin, RW; Trager-Cowan, C; Matias, V; Vantomme, A; Lorenz, K; Alves, E; Watson, IM;
PUBLISHED: 2009, SOURCE: J. Appl. Phys. - Journal of Applied Physics, VOLUME: 106, ISSUE: 8
INDEXED IN: CrossRef
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160
TITLE: Influence of steering effects on strain detection in AlGaInN/GaN heterostructures by ion channelling  Full Text
AUTHORS: Redondo-Cubero, A; Lorenz, K; Franco, N; Fernández-Garrido, S; Gago, R; Smulders, PJM; Muñoz, E; Calleja, E; Alves, E;
PUBLISHED: 2009, SOURCE: Journal of Physics D: Applied Physics - J. Phys. D: Appl. Phys., VOLUME: 42, ISSUE: 6
INDEXED IN: CrossRef
IN MY: ORCID
Page 16 of 17. Total results: 170.