Katharina Lorenz
AuthID: R-000-90E
161
TITLE: Erratum: Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range (Appl. Phys. Lett. (2007) 90(2) (022105) (10.1063/1.2424649))
AUTHORS: Hums C.; Bläsing J.; Dadgar A.; Diez A.; Hempel T.; Christen J.; Krost A.; Lorenz K.; Alves E.;
PUBLISHED: 2007, SOURCE: Applied Physics Letters, VOLUME: 90, ISSUE: 13
AUTHORS: Hums C.; Bläsing J.; Dadgar A.; Diez A.; Hempel T.; Christen J.; Krost A.; Lorenz K.; Alves E.;
PUBLISHED: 2007, SOURCE: Applied Physics Letters, VOLUME: 90, ISSUE: 13
162
TITLE: Structure and role of ultrathin AlN layers for improving optical activation of rare earth implanted GaN Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Nouet, G; Bodiou, L; Braud, A; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: physica status solidi (b) - phys. stat. sol. (b), VOLUME: 243, ISSUE: 7
163
TITLE: TEM investigation of Tm implanted GaN, the influence of high temperature annealing Full Text
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
AUTHORS: Wójtowicz, T; Gloux, F; Ruterana, P; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
164
TITLE: Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation Full Text
AUTHORS: Hernández, S; Cuscó, R; Artús, L; Nogales, E; R.W Martin; K.P O’Donnell; Halambalakis, G; Briot, O; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
AUTHORS: Hernández, S; Cuscó, R; Artús, L; Nogales, E; R.W Martin; K.P O’Donnell; Halambalakis, G; Briot, O; Lorenz, K; Alves, E;
PUBLISHED: 2006, SOURCE: Optical Materials, VOLUME: 28, ISSUE: 6-7
165
TITLE: A microspectroscopic study of cap damage in annealed RE-doped AlN-capped
AUTHORS: Nogales, E; Lorenz, K; Wang, K; Roqan, IS; Martin, RW; O'Donnell, KP; Alves, E; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting in GAN, AIN, INN AND RELATED MATERIALS, VOLUME: 892
AUTHORS: Nogales, E; Lorenz, K; Wang, K; Roqan, IS; Martin, RW; O'Donnell, KP; Alves, E; Ruffenach, S; Briot, O;
PUBLISHED: 2006, SOURCE: Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting in GAN, AIN, INN AND RELATED MATERIALS, VOLUME: 892
INDEXED IN: 
WOS
WOS166
TITLE: Gallium nitride epitaxy on (0001) sapphire
AUTHORS: Narayanan V.; Lorenz K.; Wook Kim; Mahajan S.;
PUBLISHED: 2002, SOURCE: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, VOLUME: 82, ISSUE: 5
AUTHORS: Narayanan V.; Lorenz K.; Wook Kim; Mahajan S.;
PUBLISHED: 2002, SOURCE: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, VOLUME: 82, ISSUE: 5
167
TITLE: Annealing behaviour of GaN after implantation with hafnium and indium Full Text
AUTHORS: Lorenz, K; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 228, ISSUE: 1
AUTHORS: Lorenz, K; Ruske, F; Vianden, R;
PUBLISHED: 2001, SOURCE: 4th International Conference on Nitride Semiconductors (ICNS-4) in PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, VOLUME: 228, ISSUE: 1
INDEXED IN: WOS 
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TITLE: OPTICAL DOPING OF NITRIDES BY ION IMPLANTATION Full Text
AUTHORS: ALVES, E; LORENZ, K; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29
AUTHORS: ALVES, E; LORENZ, K; VIANDEN, R; BOEMARE, C; SOARES, MJ; MONTEIRO, T;
PUBLISHED: 2001, SOURCE: Modern Physics Letters B - Mod. Phys. Lett. B, VOLUME: 15, ISSUE: 28n29
