Katharina Lorenz
AuthID: R-000-90E
11
TITLE: Metal Release and Cell Viability of 316L Stainless Steel Sputter-Coated with N-Doped a-C:H Coatings
AUTHORS: Frois, Antonio; Marques, Joao Ricardo; Santos, Luis; Peres, Marco; Lorenz, Katharina; Louro, Cristina Santos; Santos, Ana Cristina;
PUBLISHED: 2024, SOURCE: APPLIED SCIENCES-BASEL, VOLUME: 14, ISSUE: 22
AUTHORS: Frois, Antonio; Marques, Joao Ricardo; Santos, Luis; Peres, Marco; Lorenz, Katharina; Louro, Cristina Santos; Santos, Ana Cristina;
PUBLISHED: 2024, SOURCE: APPLIED SCIENCES-BASEL, VOLUME: 14, ISSUE: 22
12
TITLE: Photoluminescence, persistent luminescence and thermoluminescence studies of Cr-doped zinc gallogermanate (ZGGO:Cr) Full Text
AUTHORS: Esteves, Duarte M.; Batista, Maria S.; Rodrigues, Joana; Girao, Ana V.; Alves, Luis; Rodrigues, Ana L.; Dias, M. Isabel; Costa, Florinda M.; Lorenz, Katharina; Pereira, Sonia O.; Monteiro, Teresa; Peres, Marco;
PUBLISHED: 2024, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 12, ISSUE: 48
AUTHORS: Esteves, Duarte M.; Batista, Maria S.; Rodrigues, Joana; Girao, Ana V.; Alves, Luis; Rodrigues, Ana L.; Dias, M. Isabel; Costa, Florinda M.; Lorenz, Katharina; Pereira, Sonia O.; Monteiro, Teresa; Peres, Marco;
PUBLISHED: 2024, SOURCE: JOURNAL OF MATERIALS CHEMISTRY C, VOLUME: 12, ISSUE: 48
13
TITLE: Anisotropic below bandgap harmonic generation in β-gallium oxide Full Text
AUTHORS: Hussain, Mukhtar; Antunes, ANDRe M. E. S. Q. U. I. T. A.; Vaz, Goncalo; Alves, Joana; Pires, Hugo; Imran, Tayyab; Peres, Marco; Lorenz, Katharina; Villora, Encarnacion; Shimamura, Kiyoshi; Madas, Saibabu; Kahaly, Mousumi upadhyay; Kahaly, Subhendu; Figueira, Goncalo; Fajardo, Marta; Williams, Gareth;
PUBLISHED: 2024, SOURCE: OPTICS EXPRESS, VOLUME: 32, ISSUE: 26
AUTHORS: Hussain, Mukhtar; Antunes, ANDRe M. E. S. Q. U. I. T. A.; Vaz, Goncalo; Alves, Joana; Pires, Hugo; Imran, Tayyab; Peres, Marco; Lorenz, Katharina; Villora, Encarnacion; Shimamura, Kiyoshi; Madas, Saibabu; Kahaly, Mousumi upadhyay; Kahaly, Subhendu; Figueira, Goncalo; Fajardo, Marta; Williams, Gareth;
PUBLISHED: 2024, SOURCE: OPTICS EXPRESS, VOLUME: 32, ISSUE: 26
14
TITLE: Effect of lattice voids on Rutherford backscattering dechanneling in tungsten
AUTHORS: Jin, Xin; Djurabekova, Flyura; Sequeira, Miguel; Lorenz, Katharina; Nordlund, Kai;
PUBLISHED: 2023, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 56, ISSUE: 6
AUTHORS: Jin, Xin; Djurabekova, Flyura; Sequeira, Miguel; Lorenz, Katharina; Nordlund, Kai;
PUBLISHED: 2023, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 56, ISSUE: 6
15
TITLE: Monte Carlo simulations of ion channeling in the presence of dislocation loops: New development in the McChasy code
AUTHORS: Jóźwik, P; Caçador, A; Lorenz, K; Ratajczak, R; Mieszczyński, C;
PUBLISHED: 2023, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 538
AUTHORS: Jóźwik, P; Caçador, A; Lorenz, K; Ratajczak, R; Mieszczyński, C;
PUBLISHED: 2023, SOURCE: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, VOLUME: 538
16
TITLE: Probing the Cr3+ luminescence sensitization in & beta;-Ga2O3 with ion-beam-induced luminescence and thermoluminescence Full Text
AUTHORS: Esteves, D. M.; Rodrigues, A. L.; Alves, L. C.; Alves, E.; Dias, M. I.; Jia, Z.; Mu, W.; Lorenz, K.; Peres, M.;
PUBLISHED: 2023, SOURCE: SCIENTIFIC REPORTS, VOLUME: 13, ISSUE: 1
AUTHORS: Esteves, D. M.; Rodrigues, A. L.; Alves, L. C.; Alves, E.; Dias, M. I.; Jia, Z.; Mu, W.; Lorenz, K.; Peres, M.;
PUBLISHED: 2023, SOURCE: SCIENTIFIC REPORTS, VOLUME: 13, ISSUE: 1
17
TITLE: Cd implantation in alpha-MoO3: An atomic scale study
AUTHORS: Gerami, Adeleh Mokhles; Heiniger Schell, Juliana; Silva, E. Lora da; Costa, Messias S.; Costa, Cleidilane S.; Monteiro, Joao G.; Pires, Jose J.; Pereira, Daniela R.; Diaz Guerra, Carlos; Carbonari, Artur W.; Lorenz, Katharina; Correia, Joao G.;
PUBLISHED: 2023, SOURCE: PHYSICAL REVIEW MATERIALS, VOLUME: 7, ISSUE: 3
AUTHORS: Gerami, Adeleh Mokhles; Heiniger Schell, Juliana; Silva, E. Lora da; Costa, Messias S.; Costa, Cleidilane S.; Monteiro, Joao G.; Pires, Jose J.; Pereira, Daniela R.; Diaz Guerra, Carlos; Carbonari, Artur W.; Lorenz, Katharina; Correia, Joao G.;
PUBLISHED: 2023, SOURCE: PHYSICAL REVIEW MATERIALS, VOLUME: 7, ISSUE: 3
INDEXED IN: 
Scopus 
WOS
Scopus WOS18
TITLE: Combining MD-LAMMPS and MC-McChasy2 codes for dislocation simulations of Ni single crystal structure
AUTHORS: Mieszczynski, Cyprian; Jozwik, Przemyslaw; Skrobas, Kazimierz; Stefanska Skrobas, Kamila; Ratajczak, Renata; Jagielski, Jacek; Garrido, Frederico; Wyszkowska, Edyta; Azarov, Alexander; Lorenz, Katharina; Alves, Eduardo;
PUBLISHED: 2023, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 540
AUTHORS: Mieszczynski, Cyprian; Jozwik, Przemyslaw; Skrobas, Kazimierz; Stefanska Skrobas, Kamila; Ratajczak, Renata; Jagielski, Jacek; Garrido, Frederico; Wyszkowska, Edyta; Azarov, Alexander; Lorenz, Katharina; Alves, Eduardo;
PUBLISHED: 2023, SOURCE: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, VOLUME: 540
19
TITLE: Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors Full Text
AUTHORS: Magalhães, S; Cabaço, JS; Concepción, O; Buca, D; Stachowicz, M; Oliveira, F; Cerqueira, MF; Lorenz, K; Alves, E;
PUBLISHED: 2023, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 56, ISSUE: 24
AUTHORS: Magalhães, S; Cabaço, JS; Concepción, O; Buca, D; Stachowicz, M; Oliveira, F; Cerqueira, MF; Lorenz, K; Alves, E;
PUBLISHED: 2023, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 56, ISSUE: 24
20
TITLE: Extracting defect profiles in ion-implanted GaN from ion channeling
AUTHORS: Caçador, A; Jóźwik, P; Magalhães, S; Marques, JG; Wendler, E; Lorenz, K;
PUBLISHED: 2023, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 166
AUTHORS: Caçador, A; Jóźwik, P; Magalhães, S; Marques, JG; Wendler, E; Lorenz, K;
PUBLISHED: 2023, SOURCE: Materials Science in Semiconductor Processing, VOLUME: 166
