61
TITLE: In Situ Characterization and Modification of -Ga2O3 Flakes Using an Ion Micro-Probe  Full Text
AUTHORS: Peres, M; Alves, LC; Rocha, F; Catarino, N; Cruz, C; Alves, E; Silva, AG ; Villora, EG; Shimamura, K; Lorenz, K;
PUBLISHED: 2018, SOURCE: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, VOLUME: 215, ISSUE: 19
INDEXED IN: Scopus WOS CrossRef: 5
IN MY: ORCID
62
TITLE: Defect formation and optical activation of Tb implanted AlxGa1-xN films using channeled implantation at different temperatures  Full Text
AUTHORS: Fialho, M; Magalhaes, S; Rodrigues, J; Chauvat, MP; Ruterana, P; Monteiro, T; Lorenz, K; Alves, E;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: Scopus WOS CrossRef: 9
IN MY: ORCID
63
TITLE: Electrical characterization of molybdenum oxide lamellar crystals irradiated with UV light and proton beams  Full Text
AUTHORS: Pereira, DR; Peres, M; Alves, LC; Correia, JG; Diaz Guerra, C; Silva, AG ; Alves, E; Lorenz, K;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: Scopus WOS CrossRef: 4
IN MY: ORCID
64
TITLE: Crystal damage analysis of implanted AlxGa1-xN (0 <= x <= 1) by ion beam techniques  Full Text
AUTHORS: Faye, DN; Dobeli, M; Wendler, E; Brunner, F; Weyers, M; Magalhaes, S; Alves, E; Lorenz, K;
PUBLISHED: 2018, SOURCE: International Conference on Surface Modification of Materials by Ion Beams (SMMIB) in SURFACE & COATINGS TECHNOLOGY, VOLUME: 355
INDEXED IN: Scopus WOS CrossRef: 8
IN MY: ORCID
65
TITLE: Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications
AUTHORS: Cardoso, J; Ben Sedrine, N; Alves, A; Martins, MA; Belloeil, M; Daudin, B; Faye, DN; Alves, E; Lorenz, K; Neves, AJ; Correia, MR; Monteiro, T;
PUBLISHED: 2018, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 113, ISSUE: 20
INDEXED IN: Scopus WOS CrossRef: 8 Handle
IN MY: ORCID
66
TITLE: Eu-Doped AlGaN/GaN Superlattice-Based Diode Structure for Red Lighting: Excitation Mechanisms and Active Sites
AUTHORS: Ben Sedrine, N; Rodrigues, J; Faye, DN; Neves, AJ; Alves, E; Bockowski, M; Hoffmann, V; Weyers, M; Lorenz, K; Correia, MR; Monteiro, T;
PUBLISHED: 2018, SOURCE: ACS APPLIED NANO MATERIALS, VOLUME: 1, ISSUE: 8
INDEXED IN: Scopus WOS CrossRef: 13 Handle
IN MY: ORCID
67
TITLE: Editorial  Full Text
AUTHORS: Eduardo Alves; Katharina Lorenz; Wolfgang Einsinger; Daryush Ila;
PUBLISHED: 2018, SOURCE: Surface and Coatings Technology, VOLUME: 355
INDEXED IN: Scopus CrossRef
IN MY: ORCID
68
TITLE: Concurrent segregation and erosion effects in medium-energy iron beam patterning of silicon surfaces
AUTHORS: Redondo Cubero, A; Lorenz, K; Palomares, FJ; Muñoz, A; Castro, M; Muñoz García, J; Cuerno, R; Vázquez, L;
PUBLISHED: 2018, SOURCE: JOURNAL OF PHYSICS-CONDENSED MATTER, VOLUME: 30, ISSUE: 27
INDEXED IN: Scopus WOS CrossRef: 7
IN MY: ORCID
69
TITLE: Implantation damage formation in a-, c- and m-plane GaN  Full Text
AUTHORS: Lorenz, K; Wendler, E; Redondo Cubero, A; Catarino, N; Chauvat, MP; Schwaiger, S; Scholz, F; Alves, E; Ruterana, P;
PUBLISHED: 2017, SOURCE: ACTA MATERIALIA, VOLUME: 123
INDEXED IN: Scopus WOS CrossRef: 72
IN MY: ORCID
70
TITLE: Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7, ISSUE: 1
INDEXED IN: Scopus WOS CrossRef: 11
IN MY: ORCID
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