Katharina Lorenz
AuthID: R-000-90E
71
TITLE: Effect of buried extended defects on the radiation tolerance of ZnO
AUTHORS: Azarov, A; Wendler, E; Lorenz, K; Monakhov, E; Svensson, BG;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
AUTHORS: Azarov, A; Wendler, E; Lorenz, K; Monakhov, E; Svensson, BG;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
72
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: 
WOS
WOS IN MY: 
ORCID
ORCID73
TITLE: Effects of thermal annealing on the structural and electronic properties of rare earth-implanted MoO3 nanoplates Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Lorenz, K; Piqueras, J; Pis, I; Magnano, E; Munuera, C; Alves, E; Garcia Hernandez, M;
PUBLISHED: 2017, SOURCE: CRYSTENGCOMM, VOLUME: 19, ISSUE: 17
AUTHORS: Vila, M; Diaz Guerra, C; Lorenz, K; Piqueras, J; Pis, I; Magnano, E; Munuera, C; Alves, E; Garcia Hernandez, M;
PUBLISHED: 2017, SOURCE: CRYSTENGCOMM, VOLUME: 19, ISSUE: 17
74
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
75
TITLE: Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
AUTHORS: Schöche, S; Hofmann, T; Nilsson, D; Kakanakova Georgieva, A; Janzén, E; Kühne, P; Lorenz, K; Schubert, M; Darakchieva, V;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 20
AUTHORS: Schöche, S; Hofmann, T; Nilsson, D; Kakanakova Georgieva, A; Janzén, E; Kühne, P; Lorenz, K; Schubert, M; Darakchieva, V;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 20
76
TITLE: Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
77
TITLE: Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the D-5(1) level
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Cameron, D; Lorenz, K; Kapper, MJ; Bockowski, M; Yamaga, M; Prakash, R;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 111, ISSUE: 24
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Cameron, D; Lorenz, K; Kapper, MJ; Bockowski, M; Yamaga, M; Prakash, R;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 111, ISSUE: 24
78
TITLE: Doping β-Ga<sub>2</sub>O<sub>3</sub> with europium: influence of the implantation and annealing temperature Full Text
AUTHORS: Peres, M; Lorenz, K; Alves, E; Nogales, E; Méndez, B; Biquard, X; Daudin, B; Víllora, EG; Shimamura, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 32
AUTHORS: Peres, M; Lorenz, K; Alves, E; Nogales, E; Méndez, B; Biquard, X; Daudin, B; Víllora, EG; Shimamura, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 32
79
TITLE: Luminescence of Eu<sup>3+</sup> in GaN(Mg, Eu): Transitions from the <sup>5</sup>D<inf>1</inf> level
AUTHORS: Singh A.K.; O'Donnell K.P.; Edwards P.R.; Cameron D.; Lorenz K.; Kappers M.J.; Boćkowski M.; Yamaga M.; Prakash R.;
PUBLISHED: 2017, SOURCE: Applied Physics Letters, VOLUME: 111, ISSUE: 24
AUTHORS: Singh A.K.; O'Donnell K.P.; Edwards P.R.; Cameron D.; Lorenz K.; Kappers M.J.; Boćkowski M.; Yamaga M.; Prakash R.;
PUBLISHED: 2017, SOURCE: Applied Physics Letters, VOLUME: 111, ISSUE: 24
INDEXED IN: 
Scopus
Scopus IN MY: ORCID
ORCID80
TITLE: Utilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications Full Text
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
AUTHORS: Mitchell, B; Timmerman, D; Poplawsky, J; Zhu, W; Lee, D; Wakamatsu, R; Takatsu, J; Matsuda, M; Guo, W; Lorenz, K; Alves, E; Koizumi, A; Dierolf, V; Fujiwara, Y;
PUBLISHED: 2016, SOURCE: SCIENTIFIC REPORTS, VOLUME: 6
