Katharina Lorenz
AuthID: R-000-90E
71
TITLE: Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7, ISSUE: 1
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Lorenz, K; Kappers, MJ; Bockowski, M;
PUBLISHED: 2017, SOURCE: SCIENTIFIC REPORTS, VOLUME: 7, ISSUE: 1
72
TITLE: Effect of buried extended defects on the radiation tolerance of ZnO
AUTHORS: Azarov, A; Wendler, E; Lorenz, K; Monakhov, E; Svensson, BG;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
AUTHORS: Azarov, A; Wendler, E; Lorenz, K; Monakhov, E; Svensson, BG;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 110, ISSUE: 17
73
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhaes, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 20
INDEXED IN: 
WOS
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ORCID
ORCID74
TITLE: Effects of thermal annealing on the structural and electronic properties of rare earth-implanted MoO3 nanoplates Full Text
AUTHORS: Vila, M; Diaz Guerra, C; Lorenz, K; Piqueras, J; Pis, I; Magnano, E; Munuera, C; Alves, E; Garcia Hernandez, M;
PUBLISHED: 2017, SOURCE: CRYSTENGCOMM, VOLUME: 19, ISSUE: 17
AUTHORS: Vila, M; Diaz Guerra, C; Lorenz, K; Piqueras, J; Pis, I; Magnano, E; Munuera, C; Alves, E; Garcia Hernandez, M;
PUBLISHED: 2017, SOURCE: CRYSTENGCOMM, VOLUME: 19, ISSUE: 17
75
TITLE: Validity of Vegard's rule for Al1-xInxN (0.08 < x < 0.28) thin films grown on GaN templates Full Text
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
AUTHORS: Magalhães, S; Franco, N; Watson, IM; Martin, RW; O'Donnell, KP; Schenk, HPD; Tang, F; Sadler, TC; Kappers, MJ; Oliver, RA; Monteiro, T; Martin, TL; Bagot, PAJ; Moody, MP; Alves, E; Lorenz, K;
PUBLISHED: 2017, SOURCE: Journal of Physics D: Applied Physics, VOLUME: 50, ISSUE: 20
76
TITLE: Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>N alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect
AUTHORS: Schöche, S; Hofmann, T; Nilsson, D; Kakanakova Georgieva, A; Janzén, E; Kühne, P; Lorenz, K; Schubert, M; Darakchieva, V;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 20
AUTHORS: Schöche, S; Hofmann, T; Nilsson, D; Kakanakova Georgieva, A; Janzén, E; Kühne, P; Lorenz, K; Schubert, M; Darakchieva, V;
PUBLISHED: 2017, SOURCE: JOURNAL OF APPLIED PHYSICS, VOLUME: 121, ISSUE: 20
77
TITLE: Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
AUTHORS: Gonzalo, A; Nogales, E; Lorenz, K; Villora, EG; Shimamura, K; Piqueras, J; Mendez, B;
PUBLISHED: 2017, SOURCE: 19th International Conference on Dynamical Processes in Excited States of Solids (DPC) in JOURNAL OF LUMINESCENCE, VOLUME: 191
78
TITLE: Luminescence of Eu3+ in GaN(Mg, Eu): Transitions from the D-5(1) level
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Cameron, D; Lorenz, K; Kapper, MJ; Bockowski, M; Yamaga, M; Prakash, R;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 111, ISSUE: 24
AUTHORS: Singh, AK; O'Donnell, KP; Edwards, PR; Cameron, D; Lorenz, K; Kapper, MJ; Bockowski, M; Yamaga, M; Prakash, R;
PUBLISHED: 2017, SOURCE: APPLIED PHYSICS LETTERS, VOLUME: 111, ISSUE: 24
79
TITLE: Doping β-Ga<sub>2</sub>O<sub>3</sub> with europium: influence of the implantation and annealing temperature Full Text
AUTHORS: Peres, M; Lorenz, K; Alves, E; Nogales, E; Méndez, B; Biquard, X; Daudin, B; Víllora, EG; Shimamura, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 32
AUTHORS: Peres, M; Lorenz, K; Alves, E; Nogales, E; Méndez, B; Biquard, X; Daudin, B; Víllora, EG; Shimamura, K;
PUBLISHED: 2017, SOURCE: JOURNAL OF PHYSICS D-APPLIED PHYSICS, VOLUME: 50, ISSUE: 32
80
TITLE: Luminescence of Eu<sup>3+</sup> in GaN(Mg, Eu): Transitions from the <sup>5</sup>D<inf>1</inf> level
AUTHORS: Singh A.K.; O'Donnell K.P.; Edwards P.R.; Cameron D.; Lorenz K.; Kappers M.J.; Boćkowski M.; Yamaga M.; Prakash R.;
PUBLISHED: 2017, SOURCE: Applied Physics Letters, VOLUME: 111, ISSUE: 24
AUTHORS: Singh A.K.; O'Donnell K.P.; Edwards P.R.; Cameron D.; Lorenz K.; Kappers M.J.; Boćkowski M.; Yamaga M.; Prakash R.;
PUBLISHED: 2017, SOURCE: Applied Physics Letters, VOLUME: 111, ISSUE: 24
INDEXED IN: 
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