Modelling of the Composition Segregation Effect During Epitaxial Growth of Ingaas Quantum Well Heterostructures

AuthID
 P-003-42N
2
Author(s)
Document Type
Article
Year published
2010
Published
in SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN: 0268-1242
Volume: 25, Issue: 8, Pages: 085008 (7)
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Publication Identifiers
SCOPUS: 2-s2.0-78149267647
Wos: WOS:000280275800010
Source Identifiers
ISSN: 0268-1242
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