Optoelectronic Properties of A-Si(1-X)C(X):H Films Grown in Hydrogen Diluted Silane-Methane Plasma

AuthID
 P-003-C9A
5
Author(s)
Sazonov, A
1
Editor(s)
Schropp, REI
Document Type
Proceedings Paper
Year published
2010
Published
in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1610-1634
Volume: 7, Issue: 3-4, Pages: 782-785 (4)
Conference
23Rd International Conference on Amorphous and Nanocrystalline Semiconductors (Icans23), Date: AUG 23-28, 2009, Location: Utrecht, NETHERLANDS, Sponsors: Utrecht University, Faculty of Science;Inst. Energieforschung - Photovoltaik, Forschungszent. Jul.;Sunfilm AG;Stichting Physica;Foundation for Fundamental Research on Matter
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Publication Identifiers
SCOPUS: 2-s2.0-77952568347
Wos: WOS:000287213400069
Source Identifiers
ISSN: 1610-1634
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