Electrical Properties of Thin-Films Wide-Band Gap Semiconductor Tio(2) Prepared by Cvd

AuthID
P-003-C9F
2
Author(s)
1
Editor(s)
Schropp, REI
Document Type
Proceedings Paper
Year published
2010
Published
in PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 in Physica Status Solidi C-Current Topics in Solid State Physics, ISSN: 1610-1634
Volume: 7, Issue: 3-4, Pages: 949-952 (4)
Conference
23Rd International Conference on Amorphous and Nanocrystalline Semiconductors (Icans23), Date: AUG 23-28, 2009, Location: Utrecht, NETHERLANDS, Sponsors: Utrecht University, Faculty of Science;Inst. Energieforschung - Photovoltaik, Forschungszent. Jul.;Sunfilm AG;Stichting Physica;Foundation for Fundamental Research on Matter
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Publication Identifiers
SCOPUS: 2-s2.0-77952575071
Wos: WOS:000287213400111
Source Identifiers
ISSN: 1610-1634
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