Trivacancy in Silicon: A Combined Dlts and Ab-Initio Modeling Study

AuthID
 P-003-DMA
11
Author(s)
Markevich, VP
·
Peaker, AR
·
Lastovskii, SB
·
Murin, LI
·
Markevich, AV
·
Dobaczewski, L
·
Monakhov, EV
·
Svensson, BG
Document Type
Article
Year published
2009
Published
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 404, Issue: 23-24, Pages: 4565-4567 (3)
Conference
25Th International Conference on Defects in Semiconductors, Date: JUL 20-24, 2009, Location: St Petersburg, RUSSIA, Sponsors: Russian Fdn Basic Res, Russian Acad Sci
Indexing
Wos®
Scopus®
Crossref®8
Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-74349085204
Wos: WOS:000276029300018
Source Identifiers
ISSN: 0921-4526
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