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Hfo₂ Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium

AuthID
P-014-YYK

Author(s)

Schaeffer, J

Edwards, NV

Liu, R

Roan, D

Hradsky, B

Gregory, R

Kulik, J

Duda, E

Contreras, L

Christiansen, J

Zollner, S

Tobin, P

Nguyen, BY

Nieh, R

Ramon, M

Rao, R

Hegde, R

Rai, R

Baker, J

Voight, S

Document Type

Article

Year published

2003

Published

in JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN: 0013-4651

Volume: 150, Issue: 4, Pages: F67-F74 (8)

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Publication Identifiers

DOI: 10.1149/1.1554729

Wos: WOS:000181515100055

Source Identifiers

ISSN: 0013-4651

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Hfo₂ Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium