Microstructure Modified Hfo2 Using Zr Addition with TaXCY Gate for Improved Device Performance and Reliability

AuthID
P-014-YYS
30
Author(s)
Hegde, RI
·
Triyoso, DH
·
Tobin, PJ
·
Kalpat, S
·
Ramon, ME
·
Tseng, HH
·
Schaeffer, JK
·
Luckowski, E
·
Taylor, WJ
·
Capasso, CC
·
[+10]·
Zollner, S
·
Gregory, R
·
Werho, D
·
Fonseca, L
·
Stoker, M
·
Tracy, C
·
Chan, BW
·
Chiu, YH
·
White, BE
Document Type
Proceedings Paper
Year published
2005
Published
in IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST
Pages: 39-42 (4)
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Publication Identifiers
Wos: WOS:000236225100007
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Name Order Name   Name Order Name   Name Order Name
1 Hegde, RI;   2 Triyoso, DH;   3 Tobin, PJ;
4 Kalpat, S;   5 Ramon, ME;   6 Tseng, HH;
7 Schaeffer, JK;   8 Luckowski, E;   9 Taylor, WJ;
10 Capasso, CC;   11 Gilmer, DC;   12 Moosa, M;
13 Haggag, A;   14 Raymond, M;   15 Roan, D;
16 Nguyen, J;   17 La, LB;   18 Hebert, E;
19 Cotton, R;   20 Wang, XD;   21 Zollner, S;
22 Gregory, R;   23 Werho, D;   24 Rai, RS;
25 Fonseca, L;   26 Stoker, M;   27 Tracy, C;
28 Chan, BW;   29 Chiu, YH;   30 White, BE;