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Electroluminescence And Spin-Polarized Hole Injection In Inas/Gaas Quantum Dot Heterostructures

AuthID
P-003-RNT

Author(s)

Baidus, NV

Vasilevskiy, MI

Zvonkov, BN

Dorokhin, MV

Demina, PB

van der Meulen, H

Calleja, JM

Vina, L

Caldas, M

Studart, N

Editor(s)

Caldas, MJ; Studart, N

Document Type

Proceedings Paper

Year published

2009

Published

in PHYSICS OF SEMICONDUCTORS in AIP Conference Proceedings, ISSN: 0094-243X

Volume: 1199, Pages: 337-338 (2)

Conference

29Th International Conference on Physics of Semiconductors, Date: JUL 27-AUG 01, 2008, Location: Rio de Janeiro, BRAZIL, Sponsors: IUPAP;CNPQ;CAPES;FAPESP

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Publication Identifiers

DOI: 10.1063/1.3295439

SCOPUS: 2-s2.0-74849129044

Wos: WOS:000281590800160

Source Identifiers

ISSN: 0094-243X

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Electroluminescence And Spin-Polarized Hole Injection In Inas/Gaas Quantum Dot Heterostructures

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