Electrical Spin Injection in Light Emitting Schottky Diodes Based on Ingaas/Gaas Qw Heterostructures

AuthID
P-004-E79
9
Author(s)
Kulakovskii, VD
·
Zaitsev, SV
·
Dorokhin, MV
·
Demina, PB
·
Uskova, EA
·
2
Editor(s)
Jantsch, W; Schaffler, F
Document Type
Proceedings Paper
Year published
2007
Published
in Physics of Semiconductors, Pts A and B in AIP CONFERENCE PROCEEDINGS, ISSN: 0094-243X
Volume: 893, Pages: 1257-1258 (2)
Conference
28Th International Conference on the Physics of Semiconductors (Icps-28), Date: JUL 24-28, 2006, Location: Vienna, AUSTRIA, Sponsors: Austrian Res Ctr, Infineon, Austrian Fed Minist Educ, Sci & Culture, FFG, Austrian Nano Initiat, Vienna Convent Bur, ICPS 27, Marabun Res, Raith, Int Union Pure & Appl Phys, NMA Networking, Austrian Soc Micro & Nanoelect, Austrian Airlines, Inst Phys, Austriamicrosystems, Agilent Technologies, NIST, LOT ORIEL, Panasonic, ONR Off Naval Res, Volkswagen, USAF Off Sci Res, European Off Aerosp Res & Dev, USAF Res Lab, Darpa
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-77958485024
Wos: WOS:000246281800617
Source Identifiers
ISSN: 0094-243X
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