The Structure of Crystallographic Damage in Gan Formed During Rare Earth Ion Implantation with and Without an Ultrathin Aln Capping Layer

AuthID
 P-004-H3G
5
Author(s)
Document Type
Article
Year published
2006
Published
in SUPERLATTICES AND MICROSTRUCTURES, ISSN: 0749-6036
Volume: 40, Issue: 4-6, Pages: 300-305 (6)
Conference
Symposium on Material Science and Technology of Wide Bandgap Semiconductors Held at the 2006 Spring Meeting of the Emrs, Date: MAY 29-JUN 02, 2006, Location: Nice, FRANCE, Sponsors: European Mat Res Soc
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Publication Identifiers
SCOPUS: 2-s2.0-33845188597
Wos: WOS:000243208200018
Source Identifiers
ISSN: 0749-6036
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