Formation Energy and Migration Barrier of a Ge Vacancy from Ab Initio Studies

AuthID
P-004-J96
5
Author(s)
Document Type
Article
Year published
2006
Published
in MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, ISSN: 1369-8001
Volume: 9, Issue: 4-5, Pages: 498-502 (5)
Conference
Symposium on Germanium-Based Semiconductors from Materials to Devices Held at the 2006 Emrs Spring Meeting, Date: MAY 29-JUN 02, 2006, Location: Nice, FRANCE, Sponsors: European Mat Res Soc
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Publication Identifiers
SCOPUS: 2-s2.0-33845192217
Wos: WOS:000243574100015
Source Identifiers
ISSN: 1369-8001
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