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Characterisation of Gan Films Grown on Sapphire by Low-Temperature Cyclic Pulsed Laser Deposition/Nitrogen Rf Plasma

AuthID
P-000-HPP

Author(s)

Sanguino, P

Niehus, M

Koynov, S

Alves, H

Meyer, BK

Document Type

Article

Year published

2003

Published

in SOLID-STATE ELECTRONICS, ISSN: 0038-1101

Volume: 47, Issue: 3, Pages: 559-563 (5)

Conference

Spring Meeting of the European-Materials-Research-Society (E-Mrs), Date: JUN 18-21, 2002, Location: STRASBOURG, FRANCE, Sponsors: European Mat Res Soc

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Publication Identifiers

DOI: 10.1016/s0038-1101(02)00413-6

SCOPUS: 2-s2.0-0037343556

Wos: WOS:000180759200031

Source Identifiers

ISSN: 0038-1101

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Characterisation of Gan Films Grown on Sapphire by Low-Temperature Cyclic Pulsed Laser Deposition/Nitrogen Rf Plasma

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Characterisation of Gan Films Grown on Sapphire by Low-Temperature Cyclic Pulsed Laser Deposition/Nitrogen Rf Plasma

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