The Atomic Structure of Defects Formed During Doping of Gan with Rare Earth Ions

AuthID
 P-007-E9D
8
Author(s)
Halambalakis, G
·
Briot, O
1
Editor(s)
Stutzmann, M
Document Type
Proceedings Paper
Year published
2005
Published
in E-MRS 2004 Fall Meeting Symposia C and F in PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, ISSN: 1610-1634
Volume: 2, Issue: 3, Pages: 1081-1084 (4)
Conference
Symposium on Science and Technology of Nitrides and Related Materials/Wide Band Gap Ii-Vi Semiconductors Held at the E-Mrs 2004 Fall Meeting, Date: SEP 06-10, 2004, Location: Warsaw, POLAND, Sponsors: European Mat Res Soc
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Publication Identifiers
SCOPUS: 2-s2.0-27344432964
Wos: WOS:000228327900026
Source Identifiers
ISSN: 1610-1634
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