Degradation of Structural and Optical Properties of Ingan/Gan Multiple Quantum Wells with Increasing Number of Wells

AuthID
 P-000-RCS
10
Author(s)
O'Donnell, KP
·
Sequeira, AD
·
Liu, C
2
Editor(s)
Hoffmann, A; Rizzi, A
Document Type
Proceedings Paper
Year published
2002
Published
in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSN: 1610-1634
Volume: 0, Issue: 1, Pages: 302-306 (5)
Conference
International Workshop on Nitride Semiconductors (Iwn 2002), Date: JUL 22-25, 2002, Location: AACHEN, GERMANY, Sponsors: Res Ctr Julich, AIXTRON, Deutsch Forsch Gemeinsch, European Off Aerosp Res & Dev, Deutsch Gesell Kristallwachstum & Kristallzucht
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Publication Identifiers
SCOPUS: 2-s2.0-84875091108
Wos: WOS:000189455300064
Source Identifiers
ISSN: 1610-1634
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