Analysis of Strain Depth Variations in an In(0.19)Ga(0.81)N Layer by Raman Spectroscopy

AuthID
 P-000-RCV
8
Author(s)
Frandon, J
·
Renucci, MA
·
Sequeira, AD
·
2
Editor(s)
Hoffmann, A; Rizzi, A
Document Type
Proceedings Paper
Year published
2002
Published
in INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, ISSN: 1610-1634
Volume: 0, Issue: 1, Pages: 563-567 (5)
Conference
International Workshop on Nitride Semiconductors (Iwn 2002), Date: JUL 22-25, 2002, Location: AACHEN, GERMANY, Sponsors: Res Ctr Julich, AIXTRON, Deutsch Forsch Gemeinsch, European Off Aerosp Res & Dev, Deutsch Gesell Kristallwachstum & Kristallzucht
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Publication Identifiers
SCOPUS: 2-s2.0-29644436365
Wos: WOS:000189455300124
Source Identifiers
ISSN: 1610-1634
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