Publications

Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

AuthID
P-007-SDR

Author(s)

Pantelides, ST

Tsetseris, L

Beck, MJ

Rashkeev, SN

Hadjisavvas, G

Batyrev, I

Tuttle, B

Marinopoulos, AG

Zhou, XJ

Fleetwood, DM

Schrimpf, RD

Editor(s)

Sah,RE;Deen,JM;Toriumi,A;Zhang,J;Yota,J

Document Type

Proceedings Paper

Year published

2009

Published

in SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10 in ECS Transactions, ISSN: 1938-5862

Volume: 19, Issue: 2, Pages: 319-+ (7)

Conference

Symposium on Silicon Nitride, Silicon Dioxide Thin Insulating Films and Emerging Dielectrics Held at the 215Th Ecs Meeting, Date: MAY 24-29, 2009, Location: San Francisco, CA, Sponsors: Electrochem Soc

Indexing

Wos^®

Scopus^®

Google Scholar^®

Metadata
Sources

Publication Identifiers

DOI: 10.1149/1.3122099

SCOPUS: 2-s2.0-76549122967

Wos: WOS:000273338000017

Source Identifiers

ISSN: 1938-5862

Export Publication Metadata

Marked List

Add to Marked List

Info

At this moment we don't have any links to full text documens.

Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

Useful Links

Get Help

Federated Authentication (Click on the image)

Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling

Useful Links

Get Help