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Properties of High Growth Rate Amorphous Silicon Deposited by Mc-Rf-Pecvd

AuthID
P-000-S29

Author(s)

Lavareda, G

Chu, V

Document Type

Article

Year published

2002

Published

in VACUUM, ISSN: 0042-207X

Volume: 64, Issue: 3-4, Pages: 245-248 (4)

Conference

4Th Iberian Vacuum Meeting (Ivm-4), Date: JUL 13-15, 2000, Location: SALAMANCA, SPAIN, Sponsors: Spanish Vacuum Soc, Portuguese Vacuum Soc, Host: UNIV SALAMANCA, ESCUELA POLITECN SUPERIOR

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Publication Identifiers

DOI: 10.1016/s0042-207x(01)00293-7

SCOPUS: 2-s2.0-0036136414

Wos: WOS:000173202300011

Source Identifiers

ISSN: 0042-207X

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