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Evaluation of the Infrared Absorption in Nm-Thick Heavily Boron-Doped Si1-Xgex Layers on Silicon

AuthID
P-000-VCK

Author(s)

Cavaco, A

Sobolev, NA

Carmo, MC

Presting, H

Konig, U

Document Type

Article

Year published

2001

Published

in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, ISSN: 0957-4522

Volume: 12, Issue: 4-6, Pages: 241-243 (3)

Conference

3Rd International Conference on Materials in Microelectronics, Date: OCT 16-17, 2000, Location: DUBLIN, IRELAND, Sponsors: Inst Mat, Inst Phys, IEEE Electron Devices Soc

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Publication Identifiers

DOI: 10.1023/a:1011259303722

SCOPUS: 2-s2.0-0035299717

Wos: WOS:000169734400010

Source Identifiers

ISSN: 0957-4522

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Evaluation of the Infrared Absorption in Nm-Thick Heavily Boron-Doped Si1-Xgex Layers on Silicon

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Evaluation of the Infrared Absorption in Nm-Thick Heavily Boron-Doped Si1-Xgex Layers on Silicon

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