Publications

Evaluation of the Infrared Absorption in Nm-Thick Heavily Boron-Doped Si1-Xgex Layers on Silicon

AuthID
P-000-VCK

Author(s)

Cavaco, A

Sobolev, NA

Carmo, MC

Presting, H

Konig, U

Document Type

Article

Year published

2001

Published

in JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, ISSN: 0957-4522

Volume: 12, Issue: 4-6, Pages: 241-243 (3)

Conference

3Rd International Conference on Materials in Microelectronics, Date: OCT 16-17, 2000, Location: DUBLIN, IRELAND, Sponsors: Inst Mat, Inst Phys, IEEE Electron Devices Soc

Indexing

Wos^®

Scopus^®

Crossref^®

Google Scholar^®

Metadata
Sources

Publication Identifiers

DOI: 10.1023/a:1011259303722

Scopus: 2-s2.0-0035299717

Wos: WOS:000169734400010

Source Identifiers

ISSN: 0957-4522

Export Publication Metadata

Marked List

Add to Marked List

Info

At this moment we don't have any links to full text documens.

Evaluation of the Infrared Absorption in Nm-Thick Heavily Boron-Doped Si1-Xgex Layers on Silicon

Useful Links

Get Help

Federated Authentication (Click on the image)

Evaluation of the Infrared Absorption in Nm-Thick Heavily Boron-Doped Si1-Xgex Layers on Silicon

Useful Links

Get Help