Toggle navigation
Publications
Researchers
Institutions
0
Sign In
Federated Authentication
(Click on the image)
Local Sign In
Password Recovery
Register
Sign In
Publications
Search
Statistics
Amorphization of Gan by Ion Implantation
AuthID
P-000-VQX
9
Author(s)
Liu, C
·
Wenzel, A
·
Rauschenbach, B
·
Alves, E
·
Sequeira, AD
·
Franco, N
·
da Silva, MF
·
Soares, JC
·
Fan, XJ
1
Editor(s)
Bernas H.Heinig K.H.Williams J.Lindner J.K.N.
Document Type
Article
Year published
2001
Published
in
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,
ISSN: 0168-583X
Volume: 178, Issue: 1-4, Pages: 200-203 (4)
Conference
E-Mrs Spring Meeting on Materials Science with Ion Beams,
Date:
MAY 30-JUN 02, 2000,
Location:
STRASBOURG, FRANCE,
Sponsors:
E-MRS
Indexing
Wos
®
Scopus
®
Crossref
®
Google Scholar
®
Metadata
Sources
Publication Identifiers
DOI
:
10.1016/s0168-583x(00)00456-0
SCOPUS
: 2-s2.0-0035335020
Wos
: WOS:000169403700038
Source Identifiers
ISSN
: 0168-583X
Export Publication Metadata
Export
×
Publication Export Settings
BibTex
EndNote
APA
Export Preview
Marked List
Add to Marked List
Info
At this moment we don't have any links to full text documens.
×
Select Source
This publication has:
2 records from
ISI
2 records from
SCOPUS
2 records from
DBLP
2 records from
Unpaywall
2 records from
Openlibrary
2 records from
Handle
Please select which records must be used by Authenticus!
×
Preview Publications
© 2024 CRACS & Inesc TEC - All Rights Reserved
Privacy Policy
|
Terms of Service