A-Si-H,F-Reversible-A-Si,Ge-H,F Graded-Bandgap Structures

AuthID
 P-008-XN0
4
Author(s)
SHEN, DS
·
WAGNER, S
Document Type
Article
Year published
1989
Published
in IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN: 0018-9383
Volume: 36, Issue: 12, Pages: 2834-2838 (5)
Conference
International Topical Conf on Hydrogenated Amorphous Silicon Devices and Technology, Date: OCT, 1988, Location: YORKTOWN, NY, Host: IBM THOMAS J WATSON RES CTR
Indexing
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Publication Identifiers
Scopus: 2-s2.0-0024908308
Wos: WOS:A1989CH52800016
Source Identifiers
ISSN: 0018-9383
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