Defect Tails in Ge Implanted Si Probed by Slow Positrons and Ion Channeling

AuthID
P-009-2V4
8
Author(s)
Knights, AP
·
Nejim, A
·
Gwilliam, R
·
Coleman, PG
·
Malik, F
·
Kherandish, H
·
Romani, S
5
Editor(s)
Cowern, NEB; Jacobson, DC; Griffin, PB; Packan, PA; Webb, RP
Document Type
Proceedings Paper
Year published
1998
Published
in SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172
Volume: 532, Pages: 79-84 (6)
Conference
Materials-Research-Society Symposium on Silicon Front-End Technology - Materials Processing and Modelling, Date: APR 13-15, 1998, Location: SAN FRANCISCO, CA, Sponsors: Mat Res Soc, Appl Mat, Avant Corp, TCAD Business Unit, Charles Evans & Assoc, Eaton Corp, Genus Inc, Natl Electrostat Corp, SEMATECH, Varian
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-0031638322
Wos: WOS:000077250600012
Source Identifiers
ISSN: 0272-9172
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