High-Performance Fully Amorphous Bilayer Metal-Oxide Thin Film Transistors Using Ultra-Thin Solution-Processed Zrox Dielectric

AuthID
P-009-VEP
7
Author(s)
Liu, GX
·
Liu, A
·
Shan, FK
·
Meng, Y
·
Shin, BC
·
Document Type
Article
Year published
2014
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 105, Issue: 11, Pages: 113509 (5)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84907459234
Wos: WOS:000342995800095
Source Identifiers
ISSN: 0003-6951
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