Effect of Crystal Orientation on Defect Production and Optical Activation of Er-Implanted Sapphire

AuthID
 P-001-08H
6
Author(s)
da Silva, MF
·
Soares, J
·
Document Type
Article
Year published
2000
Published
in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X
Volume: 166, Pages: 183-187 (5)
Conference
10Th International Conference on Radioation Effects in Insulators (Rei-10), Date: JUL 18-23, 1999, Location: JENA, GERMANY, Sponsors: Deutsch Forsch Gemeinsch, Friedrich Schiller Univ Jena, Thruinger Minist Wissensch, Forsch & Kultur, Elsevier Sci BV, Amsterdam, High Voltage Engn Europa BV, Amersfoort, Carl Zeiss Jena GmbH, Jena, Jenoptik AG, Jena, Layertec GmbH, Mellingen, VACOM GmbH, Jena, JENION, Jena, PINK GmbH, Wertheim
Indexing
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Publication Identifiers
SCOPUS: 2-s2.0-0033737872
Wos: WOS:000087422200031
Source Identifiers
ISSN: 0168-583X
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