Defects Incorporating Ge Atoms in Irradiated Si : Ge

AuthID
P-001-2RN
2
Author(s)
Document Type
Article
Year published
1999
Published
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 273-4, Pages: 271-274 (4)
Conference
20Th International Conference on Defects in Semiconductors (Icds-20), Date: JUL 26-30, 1999, Location: BERKELEY, CA, Sponsors: Air Force Off Sci Res, Amer Xtal Technol Inc, Appl Mat Inc, Bell Labs Lucent Technol, Hewlett Packard Lab, IBM, Intel Corp, Lawrence Berkeley Natl Lab, Off Naval Res, Sula Technol, Xeeox Palo Alto Res Ctr
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Publication Identifiers
Scopus: 2-s2.0-0033355010
Wos: WOS:000084452200062
Source Identifiers
ISSN: 0921-4526
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