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Electrical and Photoelectronic Properties of Hexagonal Gan
AuthID
P-001-2TN
7
Author(s)
Seitz, R
·
Gaspar, C
·
Monteiro, T
·
Pereira, L
·
Pereira, E
·
Schon, O
·
Heuken, M
Document Type
Article
Year published
1999
Published
in
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
ISSN: 0031-8965
Volume: 176, Issue: 1, Pages: 351-354 (4)
Conference
3Rd International Conference on Nitride Semiconductors (Icns 99),
Date:
JUL 05-09, 1999,
Location:
MONTPELLIER, FRANCE,
Sponsors:
ICNS
Indexing
Wos
®
Scopus
®
Crossref
®
1
Google Scholar
®
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Publication Identifiers
DOI
:
10.1002/(sici)1521-396x(199911)176:1<351::aid-pssa351>3.0.co;2-y
Scopus
: 2-s2.0-0033221834
Wos
: WOS:000084032200067
Source Identifiers
ISSN
: 0031-8965
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