Publications

Photoluminescence Between 3.36 Ev and 3.41 Ev from Gan Epitaxial Layers

AuthID
P-001-6C0

Author(s)

Seitz, R

Gaspar, C

Monteiro, T

Pereira, E

Poisson, MA

Beaumont, B

Editor(s)

Binari, SC; Burk, AA; Melloch, MR; Nguyen, C

Document Type

Proceedings Paper

Year published

1999

Published

in WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 in MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, ISSN: 0272-9172

Volume: 572, Pages: 419-425 (7)

Conference

Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 at the 1999 Mrs Spring Meeting, Date: APR 05-08, 1999, Location: SAN FRANCISCO, CA, Sponsors: Mat Res Soc, Air Force Res Labs, DARPA, ODDR&E(R), Army Res Off

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