Publications

Defect Development and Dopant Location Due to Elevated Temperature Implantation of Inp with Mev Zinc Ions

AuthID
P-001-E7Z

Author(s)

Krause, H

Flagmeyer, RH

Vogt, J

Kling, A

Butz, T

Document Type

Article

Year published

1996

Published

in NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN: 0168-583X

Volume: 113, Issue: 1-4, Pages: 209-213 (5)

Conference

4Th European Conference on Accelerators in Applied Research and Technology (Ecaart-4), Date: AUG 29-SEP 02, 1995, Location: ZURICH, SWITZERLAND, Host: SWISS FED INST TECHNOL

Indexing

Wos^®

Scopus^®

Crossref^®

Google Scholar^®

Metadata
Sources

Publication Identifiers

DOI: 10.1016/0168-583x(95)01330-x

Scopus: 2-s2.0-0030166112

Wos: WOS:A1996UW20200047

Source Identifiers

ISSN: 0168-583X

Export Publication Metadata

Marked List

Add to Marked List

Info

At this moment we don't have any links to full text documens.

Defect Development and Dopant Location Due to Elevated Temperature Implantation of Inp with Mev Zinc Ions

Useful Links

Get Help

Federated Authentication (Click on the image)

Defect Development and Dopant Location Due to Elevated Temperature Implantation of Inp with Mev Zinc Ions

Useful Links

Get Help