High Field-Effect Mobility Zinc Oxide Thin Film Transistors Produced at Room Temperature

AuthID
 P-00F-H9D
9
Author(s)
Goncalves, A
·
Document Type
Proceedings Paper
Year published
2004
Published
in Journal of Non-Crystalline Solids, ISSN: 0022-3093
Volume: 338-340, Issue: 1 SPEC. ISS., Pages: 806-809
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Publication Identifiers
SCOPUS: 2-s2.0-2942622227
Source Identifiers
ISSN: 0022-3093
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