Extremely Uniform Inas/Gaas Quantum Dots Emitting at 1.46 Mkm at Room Temperature Grown by Mocvd with Bi Doping

AuthID
P-00F-JZJ
7
Author(s)
Karpovich, IA
·
Baidus, NV
·
Filatov, DO
·
Morozov, SV
·
Levichev, SB
2
Editor(s)
Miura, N; Ando, T
Document Type
Proceedings Paper
Year published
2001
Published
in PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II in SPRINGER PROCEEDINGS IN PHYSICS, ISSN: 0930-8989
Volume: 87, Pages: 397-398 (2)
Conference
25Th International Conference on the Physics of Semiconductors (Icps25), Date: SEP 17-22, 2000, Location: OSAKA, JAPAN, Sponsors: Int Union Pure & Appl Phys, Sci Council Japan, Phys Soc Japan, Japan Soc Appl Phys, Osaka Prefecture, Osaka City
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Publication Identifiers
Wos: WOS:000171592800183
Source Identifiers
ISSN: 0930-8989
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