Phosphorus Doping of Si Nanocrystals: Interface Defects and Charge Compensation

AuthID
 P-00F-KDN
6
Author(s)
Stegner, AR
·
Klein, K
·
Wiggers, H
·
Brandt, MS
·
Stutzmann, M
Document Type
Article
Year published
2007
Published
in PHYSICA B-CONDENSED MATTER, ISSN: 0921-4526
Volume: 401, Pages: 541-545 (5)
Conference
24Th International Conference on Defects in Semiconductors, Date: JUL 22-27, 2007, Location: Albuquerque, NM
Indexing
Wos®
Scopus®
Crossref®22
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-36048967904
Wos: WOS:000252041000128
Source Identifiers
ISSN: 0921-4526
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service