Energy Distributions of Ga+ and In+ Secondary Ions Sputtered from Aiiibv Compound Semiconductors by Noble Gas Ions: Mass-Dependence of the High-Energy Yield on the Second Component (P, As, Sb) of the Compounds

AuthID
 P-00F-Q4J
6
Author(s)
Daolio, S
·
Pagura, C
·
Greenwood, CL
·
McIntyre, NS
1
Editor(s)
Hoekstra RZeijlmans van Emmichoven P.A.
Document Type
Proceedings Paper
Year published
2003
Published
in Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, ISSN: 0168-583X
Volume: 203, Pages: 198-204
Conference
Iisc-14, Date: 8 September 2002 through 13 September 2002, Location: Ameland
Indexing
Scopus®
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Google Scholar®
Publication Identifiers
Scopus: 2-s2.0-0037388827
Source Identifiers
ISSN: 0168-583X
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