Effect of Anti-Diffusion Oxide Layer on Enhanced Thermal Stability of Magnetic Tunnel Junctions

AuthID
 P-00H-PAM
4
Author(s)
S., C
·
P., FP
Document Type
Article
Year published
2006
Published
in Chinese Physics Letters - Chinese Phys. Lett., ISSN: 0256-307X
Volume: 23, Issue: 4, Pages: 932-935
Indexing
Crossref®
Google Scholar®
Publication Identifiers
Source Identifiers
ISSN: 0256-307X
Export Publication Metadata
Marked List
 Add to Marked List
Info
At this moment we don't have any links to full text documens.

A place for researchers and their institutions

Useful Links

Get Help

© 2024 CRACS & Inesc TEC - All Rights Reserved Privacy Policy | Terms of Service