Fabrication of Gesn-Multiple Quantum Wells by Overgrowth of Sn on Ge by Using Molecular Beam Epitaxy

AuthID
 P-00K-0N9
9
Author(s)
Oliveira, F
·
Fischer, IA
·
Benedetti, A
·
Zaumseil, P
·
Stefanov, S
·
Schulze, J
Document Type
Article
Year published
2015
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 107, Issue: 26, Pages: 262102 (5)
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Publication Identifiers
SCOPUS: 2-s2.0-84953280082
Wos: WOS:000368442300017
Source Identifiers
ISSN: 0003-6951
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