Hole Mobility Modulation of Solution-Processed Nickel Oxide Thin-Film Transistor Based on High-K Dielectric

AuthID
P-00K-JPW
7
Author(s)
Liu, GX
·
Zhu, HH
·
Shin, B
·
Shan, FK
Document Type
Article
Year published
2016
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 108, Issue: 23, Pages: 233506 (5)
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-84974623209
Wos: WOS:000378924700049
Source Identifiers
ISSN: 0003-6951
Export Publication Metadata
Marked List
Info
At this moment we don't have any links to full text documens.