High-Mobility P-Type Niox Thin-Film Transistors Processed at Low Temperatures with Al2O3 High-K Dielectric

AuthID
 P-00M-4NQ
9
Author(s)
Shan, FK
·
Liu, A
·
Zhu, HH
·
Kong, WJ
·
Liu, JQ
·
Shin, BC
·
Liu, GX
Document Type
Article
Year published
2016
Published
in JOURNAL OF MATERIALS CHEMISTRY C, ISSN: 2050-7526
Volume: 4, Issue: 40, Pages: 9438-9444 (7)
Indexing
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Scopus®
Crossref®84
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Publication Identifiers
SCOPUS: 2-s2.0-84991618970
Wos: WOS:000386240300007
Source Identifiers
ISSN: 2050-7526
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