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Lattice Location of Implanted Co in Heavily Doped (N+)- and (P)+-Type Silicon
AuthID
P-00M-MY2
7
Author(s)
da Silva, DJ
·
Wahl, U
·
Correia, JG
·
Amorim, LM
·
da Silva, MR
·
da Costa Pereira, LMD
·
Araujo, JP
Document Type
Article
Year published
2017
Published
in
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
ISSN: 0947-8396
Volume: 123, Issue: 4
Indexing
Wos
®
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Metadata
Sources
Publication Identifiers
DOI
:
10.1007/s00339-017-0870-0
Scopus
: 2-s2.0-85016742530
Wos
: WOS:000397581200071
Source Identifiers
ISSN
: 0947-8396
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