Enhanced Resistive Switching Characteristics in Pt/Batio3/Ito Structures Through Insertion of Hfo2:Al2O3 (Hao) Dielectric Thin Layer

AuthID
 P-00M-NFE
9
Author(s)
Faita, FL
·
Kamakshi, K
·
Pasa, AA
·
Document Type
Article
Year published
2017
Published
in SCIENTIFIC REPORTS, ISSN: 2045-2322
Volume: 7, Pages: 46350 (10)
Indexing
Wos®
Scopus®
Crossref®30
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85017368347
Wos: WOS:000398831400001
Source Identifiers
ISSN: 2045-2322
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