Temperature Dependent Effective Mass in Algan/Gan High Electron Mobility Transistor Structures

AuthID
P-002-3FY
11
Author(s)
Hofmann, T
·
Kuehne, P
·
Schoeche, S
·
Chen, JT
·
Forsberg, U
·
Herzinger, CM
·
Woollam, JA
·
Schubert, M
·
Document Type
Article
Year published
2012
Published
in APPLIED PHYSICS LETTERS, ISSN: 0003-6951
Volume: 101, Issue: 19, Pages: 192102 (4)
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Publication Identifiers
Scopus: 2-s2.0-84869037447
Wos: WOS:000311320100032
Source Identifiers
ISSN: 0003-6951
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