Competitive and Cost Effective High-K Based 28Nm Cmos Technology for Low Power Applications

AuthID
P-00N-QTF
32
Author(s)
Arnaud, F
·
Thean, A
·
Eller, M
·
Lipinski, M
·
Ostermayr, M
·
Kang, K
·
Kim, NS
·
[+7]·
[+5]·
Matsuoka, F
·
Lindsay, R
·
Sudijono, J
·
Johnson, FS
·
Ku, JH
·
Sekine, M
·
Steegen, A
·
Sampson, R
Document Type
Proceedings Paper
Year published
2009
Published
in Technical Digest - International Electron Devices Meeting, IEDM, ISSN: 0163-1918
Pages: 28.2.1-28.2.4
Conference
2009 International Electron Devices Meeting, Iedm 2009, Date: 7 December 2009 through 9 December 2009, Location: Baltimore, MD, Sponsors: IEEE Electron Devices Society
Indexing
Publication Identifiers
SCOPUS: 2-s2.0-77952337060
Source Identifiers
ISSN: 0163-1918
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Name Order Name   Name Order Name   Name Order Name
1 Arnaud, F;   2 Thean, A;   3 Eller, M;
4 Lipinski, M;   5 The, YW;   6 Ostermayr, M;
7 Kang, K;   8 Kim, NS;   9 Ohuchi, K;
10 Han, JP;   11 Nair, DR;   12 Lian, J;
13 Uchimura, S;   14 Kohler, S;   15 Miyaki, S;
16 Ferreira, P ;   17 Park, JH;   18 Hamaguchi, M;
19 Miyashita, K;   20 Augur, R;   21 Zhang, Q;
22 Strahrenberg, K;   23 ElGhouli, S;   24 Bonnouvrier, J;
25 Matsuoka, F;   26 Lindsay, R;   27 Sudijono, J;
28 Johnson, FS;   29 Ku, JH;   30 Sekine, M;
31 Steegen, A;   32 Sampson, R;