Lifetime Degradation of N-Type Czochralski Silicon After Hydrogenation

AuthID
 P-00N-S1S
9
Author(s)
Vaqueiro Contreras, M
·
Markevich, VP
·
Mullins, J
·
Halsall, MP
·
Murin, LI
·
Falster, R
·
Binns, J
·
Peaker, AR
Document Type
Article
Year published
2018
Published
in JOURNAL OF APPLIED PHYSICS, ISSN: 0021-8979
Volume: 123, Issue: 16
Conference
29Th International Conference on Defects in Semiconductors (Icds), Date: JUL 31-AUG 04, 2017, Location: Matsue, JAPAN
Indexing
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Scopus®
Crossref®4
Google Scholar®
Publication Identifiers
SCOPUS: 2-s2.0-85043994004
Wos: WOS:000431147200018
Source Identifiers
ISSN: 0021-8979
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